Publications internationales

Publications 2006 :

1- A. Fedala, R. Cherfi, M. Aoucher, T. Mohammed-Brahim Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si1-xGex) deposited by DC magnetron sputtering at high rate Materials science in semiconductor processing 9, pp.690-693 (2006) www.elsevier.com/locate/mssp
2- A. Allag, T. Smail, M. Aoucher Numerical simulation of a low- and a high-electric-field photocurrent decay in a-Si:H Journal of Non-Crystalline Solids 352 (2006) 1184 www.elsevier.com/locate/jnon...
3- K. Mokeddem, M. Aoucher and T. Smail Hydrogenated amorphous silicon nitride deposited by DC magnetron sputtering Superlattices and Microstructures 40 (2006) 598-602 www.elsevier.com/locate/supe...

Publications 2007 :

1- A. Keffous, K. Bourenane, M. Kechouane, N. Gabouze, T. Kerdja Morphological, structural and optical properties of thin SiC layer growth onto silicon by pulsed laser deposition Vacuum 81(2007) 632–635 www.elsevier.com/locate/vacuum
2- A. Keffous, K. Bourenane, M. Kechouane, N. Gabouze, L. Guerbous Effect of anodization time on Photoluminescence of porous thin SiC layer grown onto Silicon Journal of Luminescence, Vol.126, (2007), p561–565 www.elsevier.com/locate/jlumin
3- A. Keffous, K. Bourenane, N. Gabouze, M. Kechouane, T. Kerdja, A. Manseri, L.Guerbous and D. Oudjaout Morphology and photoluminescence of anodized aluminium-coated 6H-SiC samples Phys. Stat. Sol. (c) 4 , No. 6, 1913–1917 (2007) www3.interscience.wiley.com/journal/102519628/home

Publications 2008 :

1- A. Keffous, O. Manseri, H. Menari, F. Kezzoula, M. Kechouane, A. Bourenane, T. Kerdja, G. Nezzal, A. Boukezzata Structural and optical properties of polycrystalline 6H-SiC and crystalline SiC film grown onto silicon substrate by PLD Modern Physics Letters B, Vol.22, N°1, (2008), pp61-72 www.worldscinet.com/mplb/mpl...
2- K. Bourenane, A. Keffous, M. Kechouane, G. Nezzal, A. Bourenane, A. Boukezzata Study on the photoluminescence properties of porous 6H-SiC(p) and SiC film on p-Si substrate Modern Physics Letters B, Vol.22, N°61, (2008), pp415-424 www.worldscinet.com/mplb/mpl...
3- Boukezzata A., Nezzal G., Keffous A., Bourenane K., Kerdja T., Kechouane M., Menari H. Effect of thickness and porous structure of SiC layers on the spectral response of the Pd/SiC-pSi Schottky photodiodes Optics Communications, 281 (8), p.2126-2131, Apr 2008 www.elsevier.com/locate/optcom
4- K. Bourenane, A. Keffous, M. Kechouane, G. Nezzal, A. Boukezzata, T. Kerdja Morphological and photoluminescence study of porous thin SiC layer grown onto silicon Surface and Interface Analysis, Vol.40, (2008), pp763-768 http://www3.interscience.wiley.com/...
5- A. Ben Abdelmoumen, R. Cherfi, M. Kechouane, M. Aoucher Hydrogenated amorphous silicon deposited by pulsed DC magnetron sputtering.Deposition temperature effect" Thin Solid Filmsvol. 517, no 1 (2008), pp. 369-371. www.elsevier.com/locate/inca...
6- Bourenane, K., Keffous, A., Belkacem, Y., Menari, H., M. Kechouane, M., Kerdja, T., Nezzal, G., Boukezzata, A. New material and selective growth of thin SiC films for environmental and optoelectronics devices Conference Proceedings - International Conference on Indium Phosphide and Related Materials, art. no. 4702928 (2008). http://iprm2008.org/
7- Ouchabane, M., Kechouane, M., Henda, K., Salah, H., Touchrift, B., Tabet, N. On the structure of deposited diamond-like carbon films produced by Rf (13.56MHz) CH4 plasma AIP Conference Proceedings 1047, pp. 123-126 (2008). http://www.springer.com/physics/ato...

Publications 2009 :

1- Cherfi, R., Abdelmoumene, A., Kechouane, M., Rahal, A., Aoucher, M., Mohammed-Brahim, T. Deposition temperature effects on the characteristics of a-Si:H deposited by pulsed DC magnetron sputtering Physica Status Solidi (A) Applications and Materials 206 (7), pp. 1504-1509 (2009). http://www3.interscience.wiley.com/...
2- Mebhah, D., Imatoukene, D., Lounis-Mokrani, Z., Kechouane, M. Comparative study on the effect of annealing treatments on RTL mechanism in natural quartz from different origins Journal of Luminescence 129 (12), pp. 1615-1618 (2009). linkinghub.elsevier.com/retrieve/pii/S0022231309002464
3- Zebbar, N., Aida, M.S., Hafdallah, A.E.K., Daranfad, O., Lekiket, H., Kechouane, M. Properties of ZnO thin films grown on Si substrates by ultrasonic spray and ZnO/Si heterojunctions , Materials Science Forum 609, pp. 133-137 (2009). http://www.scientific.net/
4- Keffous, A., Kechouane, M., Kerdja, T., Belkacem, Y., Bourenane, K., Menari, H., Maoudj, M., Boukezzata, A. Electrical properties dependent on Schottky diode Pd/PSC-pSi(100) based on hydrocarbon gas sensor , Materials Science Forum 609, pp. 195-199 (2009). http://www.scientific.net/
5- Sali, S., Tala-Ighil, R., Kermadi, S., Boumaour, M., Kechouane, M., Photoluminescence and structural properties of ZnO films deposited on Si substrates by chemical spray deposition Materials Science Forum 609, pp. 111-115 (2009). http://www.scientific.net/
6- Khelifati, N., Cherfi, R., Keffous, A., Rahal, A., Kechouane, M. Effects of hydrogen partial pressure on boron-doped hydrogenated amorphous silicon (a-Si:H(B)) properties, Materials Science Forum 609, pp. 81-85 (2009). http://www.scientific.net/
7- Seba, H.Y., Cherfi, R., Hamadache, F., Aoucher, M Correlation between physicochemical and electrical properties of hydrogenated amorphous silicon doped with boron : Effect of thermal annealing, , Materials Science Forum 609, pp. 129-132 (2009). http://www.scientific.net/
8- A. Brighet, R. Cherfi, M. Kechouane*, A. Benabdelmoumen, A. Rahal Effects of trimethylphosphine incorporation on hydrogenated amorphous silicon (a-Si:H) properties Physics Procedia 2 (2009) 913–920. www.sciencedirect.com/scienc... 22 F. Hamadache and B. Gelloz Carrier Transport Mechanisms in Cathodically Biazed Meso-Porous p+-Si Against Solutions Containing Fe2+ and Co2+ Species Phys. Status Solidi C 6, 1689-1693 (2009). www3.interscience.wiley.com

Publications 2010 :

1- Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching
A. Boukezzata ; A. Keffous ; A. Cheriet ; Y. Belkacem ; N. Gabouze ; A. Manseri ; G. Nezzal ; M. Kechouane ; A. Brighet ; L. Guerbous ; H. Menari
Applied Surface Science (2010), 256 (18), pp 5592-5595
2- Structural and optical properties of a-Si1-xCx:H film synthetized by DC magnetron sputtering
A. Keffous ; A. Cheriet ; Y. Belkacem ; N. Gabouze ; A. Boukezzata ; A. Brighet ; R. Cherfi, M. Kechouane ; L. Guerbous ; I. Menous ; H. Menari
Applied Surface Science (2010), 256 (14), pp 4591-4595
3- The annealing temperature effect on the electrical properties of boron-doped hydrogenated amorphous silicon a-Si:H(B)
N. Khelifati ; S. Tata ; A. Rahal ; R. Cherfi ; A. Fedala ; M. Kechouane ; T. Mohammed-Brahim
Physica Status Solidi (C) (April 2010), 7 (3-4), pg. 679-682
4- Fabrication and characterization of silicon pillars formed by nanosecond pulsed excimer laser in vacuum
A. Djemaa ; N. Gabouze ; C. Yaddadene ; Y. Belaroussi ; T. Kerdja ; M. Kechouane ; H. Menari ; A. Y. Khereddine
Surface and Interface Analysis (June 2010), 42 (6-7), pg. 1295-1298
5- Effect of plasma power on properties of a-SiC:H films deposited by DC magnetron sputtering
A. Brighet ; K. Mokkadem, A. Fedala, M. Kechouane
Physica Status Solidi (C) (2010), 7 (3-4), pp 561-564
6- Influence of bias voltage on the structure and deposition mechanism of diamond-like carbon films produced by RF (13.56MHz) CH4 plasma
M. Ouchabane, H. Salah, M. Hermann, N. Tabet, K. Henda, B. Touchrift, M. Kechouane
Physica Status Solidi (A) 207, No. 10, (2010) 2311–2318.
7- Investigation properties of a-Si1-xCx:H film elaborated by co-sputtering of Si and 6H-SiC
A. Keffous ; A. Cheriet ; Y. Belkacem ; A. Manseri ; N. Gabouze ; M. Kechouane ; A. Brighet ; A. Boukezzata ; S. Kaci ; I. Menous ; G. Nezzal ; L. Guerbous ; H. Menari
Modern Physic Letters B, Vol.24, N°19, (2010) pp2101-2112.
8- KrF excimer laser induced formation of thion crystalline silicon carbide layers
S. Nemouchi, K. Mirouh, A. Karaali, N. Boukheit, M. Kechouane, T. Kerdja
Journal of Optoelectronics and Advanced Materials, Vol.12, N°3, (2010), pp 637-640.
9- N and P type top-gate microcrystalline silicon TFTs processed at low temperature (T < 200 °C) on the same glass substrate
I. Souleiman, K. Kandoussi, K. Belarbi, R. Cherfi, A. Fedala, N. Coulon, C. Simon, T. Mohammed-Brahim
P hys. Status Solidi C 7, No. 3–4, (2010) 1148–1151.
10- Low temperature deposition of microcrystalline silicon germanium Si1-xGex by RF-PECVD Abdelkrim Fedala, Claude Simon, Nathalie Coulon, Tayeb Mohammed-Brahim, Mehena Abdeslam, and Ahmed-Chafik Chami Phys. Status Solidi C 7, No. 3–4, 762– 765 (2010) / DOI 10.1002/pssc.200982791.