Communications internationales

Auteurs
Intitulé
Date
Manifestation/Lieu
K.HAMMOUDI,
A FEDALA,
T. SMAIL and
M. AOUCHER
Spectral dependence of optical absorption and photoconductivity in hydrogenated amorphous silicon optical quenching of photoconductivity
May 29 to June 2 2006.
EMRS, Symposia I, S et T, Nice (France)
A. Fedala,
R. Cherfi,
M. Aoucher.
T. Mohammed-Brahim
Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si1-xGex) deposited by DC magnetron sputtering at high rate
May 29 to June 2 2006.
EMRS, Symposia I, S et T, Nice (France)
K. Hammoudi,
A. Fedala,
T. Smail and
M. Aoucher
The numerical simulation of the Constant Photocurrent Method (CPM) in Hydrogenated Amorphous Silicon
19-23 novembre 2006
International Conference on Micro and nano Technologies (ICMNT06), Tizi-Ouzou (Algérie)
M. Kechouane,
M. Abbaci and
S. Mammeri
Neutron Transmutation Doping Of Hydrogenated Amorphous Silicon Thin Films
24 - 26 Novembre 2006
Xèmes JMSM, Meknès (Maroc),
K. Bourenane,
A. Keffous,
G. Nezzal,
M. Kechouane,
A. Boukezzata, S. Naama
Al-assisted Electroless Chemical Etching of p-type 6H-SiC in HF/K2Cr2O7 Solutions
21-24 Mai 2007
Congrès International sur les Energies Renouvelables et le Développement21Durable, « ICRESD_07 », Tlemcen
L. Ainouche,
K . Mokadem,
R. Cherfi, A.Rahal,
M. Kechouane and M. Aoucher
Comparison between profiles of the density of localised states determined by modulated photocurrent and transient photocurrent in a-Si:H deposited by DC magnetron sputtering
20-25 May 2007
5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5) Marseille (France)
A. Ben abdelmoumen,
R. Cherfi,
M. Kechouane et M. Aoucher
Hydrogenated Amorphous Silicon deposited by pulsed DC Magnetron Sputtering : Deposition Temperature effect 
20-25 May 2007
5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5) Marseille (France)
K. Hammoudi,
A. Fedala,
T. Smail et
M. Aoucher
The numerical simulation of the dual beam Photoconductivity (DPB) in hydrogenated amorphous silicon : optical quenching of the photoconductivity
02-04 Juillet 2007
International conference on modeling and simulation (MS’07 Algiers), Alger, Algérie
K.Bourenane, A.Keffous, M. Kechouane, G. Nezzal, A. Boukezzata, T. Kerdja
Morphological and Photoluminescence Study of Porous Thin SiC Layer Grown onto Silicon
09 - 14 Septembre 2007
12th European Conference on Applications of Surface and Interface Analysis, « ECASIA’07 », brussels, Belgique
N. Khelifati, K. Mokeddem, A. Keffous, A. Rahal, M. Kechouane
Effect of hydrogen partial pressure on boron-doped hydrogenated amorphous silicon(a-Si:H(B))
19-22 Mai 2008
First International Conference on Thin Films and Porous Materials, « ICTFPM’08 », Zéralda
K. Hammoudi, A. Fedala, T. Smail, M. Aoucher
Temperature dependence of optical quenching of photoconductivity in hydrogenated amorphous silicon
19-22 Mai 2008
First International Conference on Thin Films and Porous Materials, « ICTFPM’08 », Zéralda
N. Zebbar, M.S. Aida, A.E. Hafdallah, H. Lekiket, O. Daranfad
Properties of ZnO thin films grown on Si substrates by ultrasonic spray and ZnO/Si heterojunctions
19-22 Mai 2008
First International Conference on Thin Films and Porous Materials, « ICTFPM’08 », Zéralda
K. Bourenane, G. Nezzal, a. Keffous, m. Kechouane, a. Boukezzata, T. Kerdja, h. Menari 
Electrical properties dependent on C2H6 gas for new Schottky diode Pd on porous SiC film
19-22 Mai 2008
First International Conference on Thin Films and Porous Materials, « ICTFPM’08 », Zéralda
S. Sali, R. Tala-Ighil, S. Kermadi, M. Boumaour, M. Kechouane
Photoluminescence and structure of ZnO films deposited on Si substrates by chemical spray deposition
19-22 Mai 2008
First International Conference on Thin Films and Porous Materials, « ICTFPM’08 », Zéralda
K. Bourenane, G. Nezzal, A. Keffous, M. Kechouane, A.Boukezzata, T.Kerdja, H.Menari 
Preparation and characterization of SiC films deposited by Laser Excimer
23-26 Juin 2008
First International Conference on Laser and Plasma Applications in Material Science, « LAPAMS’08 »,Zéralda
M. Ouchabane, M. Kechouane, K. Henda, H. Salah, N. Touchrift, N. Tabet
On the structure of deposited diamond-like carbon films produced by RF (13.56MHz) CH4 plasma
23-26 Juin 2008
First International Conference on Laser and Plasma Applications in Material Science, « LAPAMS’08 »,Zéralda
K. Bourenane, A. Keffous, M. Kechouane, G. Nezal, AT. Kerdja. A. Boukezzata
New material and selective Growth of thin SiC films for 
 environmental and optoelectronics devices
25 - 29 Septembre 2008
20ième Conference IPRM2008 Indium Phosphide and Related Materials
, versailles, Paris - France,
A. Brighet, R. Cherfi, M. Kechouane, A. Benabdelmoumen
Effect of phosphorus incorporation in hydrogenated amorphous silicon (a-Si:H)
04 - 08 Novembre 2008.
XIèmes Journées Maghrébines sur les Sciences des Matériaux, Mahdia (Tunisie),
S. Bendjaballah, A. Fedala, R. Cherfi, K. Mokeddem, A. Rahal, M. Kechouane, M. Aoucher
Détermination de la longueur de diffusion des porteurs minoritaires dans le silicium amorphe hydrogéné par la technique SPV (Surface Photovoltage Technique)
04 - 08 Novembre 2008.
XIèmes Journées Maghrébines sur les Sciences des Matériaux, Mahdia (Tunisie),
N. Khelifati, A. Rahal, M. Kechouane
Study of infrared-optical absorption and photosensitivity of boron-doped a-Si:H material
12-15 december 2008.
International Conference on Optics Photonics and their applications (ICOPA’08), USTHB
Zougar, K. Mokeddem, M. Abdelmoumen, F. Hamadache
The photoelectrical properties of a-Si:H thin films deposited by DC-magnetron sputtering on porous silicon
12-15 december 2008.
International Conference on Optics Photonics and their applications
A. Fedala, K. Belarbi, K. Kandoussi, R. Cherfi, N. Coulon, C. Simon, T. Mohammed-Brahim,
Improvement of electrical performance of SiGe TFTs,
05 - 06 mars 2009
International Thin Film Transistor conference ITC’09, Paris
R. Cherfi, K. Kandoussi, A. Fedala, K. Belarbi, N. Coulon, C. Simon, T. Mohammed-Brahim
Correlation between quality of µc-Si film deposited at low temperature (<180°C) by PECVD and TFTs characteristics.
05 - 06 mars 2009
International Thin Film Transistor conference ITC’09, Paris
K. Belarbi, K. Kandoussi, I. Souleiman, R. Cherfi, A. Fedala, N. Coulon, C. Simon, T. Mohammed-Brahim
Microcrystalline silicon TFTs with silicon nitride as gate dielectric deposited at 150°C
05 - 06 mars 2009
International Thin Film Transistor conference ITC’09, Paris
K. Kandoussi, I. Souleiman, K. Belarbi, R. Cherfi, A. Fedala, N. Coulon, C. Simon, T. Mohammed-Brahim
High mobility microcrystalline silicon p-channel TFTs fabricated at low temperature
05 - 06 mars 2009
International Thin Film Transistor conference ITC’09, Paris
A. Boughelout, M. Kechouane, S. Sali, N. Zebbar, M. Siad
Physical properties of ZnO thin film deposited by DC reactive sputtering
18-20 Mai 2009
International Conference on New Materials Design Technology, CRNA, Alger
S. Bendjaballah2, M. Fathi, M. Kechouane, A. Mefoued, A. Messaoud, H. Menari, A. Mougas
Growth of ultrathin silicon oxide for MIS solar cells devices
18-20 Mai 2009
International Conference on New Materials Design Technology, CRNA, Alger
N. Khelifati, S. Tata, A. Rahal, R. Cherfi,A. Fedala,M. Kechouane and T. Mohammed-Brahim
The annealing temperature effect on the electrical properties of boron-doped hydrogenated amorphous silicon a-Si:H(B)
23-28 août 2009
23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS23), Utrecht, Pays-Bas
L. Laidoudi, A. Rahal, A. Fedala, M. Kechouane, T. Mohammed-Brahim
Effects of hydrogen and germanium concentrations on hydrogenated amorphous silicon germanium
23-28 août 2009
23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS23), Utrecht, Pays-Bas
A. Brighet, K. Mokkedem, A. Fedala, and M. Kechouane
Effect of plasma power on properties of TMP doped hydrogenated amorphous silicon deposited by DC magnetron sputtering
23-28 août 2009
23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS23), Utrecht, Pays-Bas
A. Fedala, C. Simon, N. Coulon, T. Mohammed-Brahim, M. Abdeslam, A. Chami
Low germanium fraction in microcrystalline silicon germanium Si1-xGex
23-28 août 2009
23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS23), Utrecht, Pays-Bas
K. Hammoudi, A. Fedala, T. Smail, and M. Aoucher
Temperature dependence of optical quenching of photoconductivity in hydrogenated amorphous silicon
23-28 août 2009
23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS23), Utrecht, Pays-Bas
A. Boukezzata, A. Keffous, A. Cheriet, Y. Belkacem, A. Manseri, Y. Belaroussi, H. Menari, A. Brighet, M. Kechouane, L. Guerbous
Structural and Optical Properties of Thin Films Porous Amorphous Silicon Carbide Formed by Ag-Assisted Photochemical Etching
November, 15th-20th, 2009
Progress in Applied Surface, Interface and Thin Film Science 2009 -– Florence (Italy)
A. Cheriet, A. Keffous, Y. Belkacem, A. Manseri, M. Kechouane, T. Kerdja, Y. Belaroussi, L. Guerbous, H. Menari
Laser Ablated and DC Sputtered SiC Films Deposited onto P-type Silicon:Structural and Optical Properties
November, 15th-20th, 2009
Progress in Applied Surface, Interface and Thin Film Science 2009 -– Florence (Italy)
A. Brighet, A. Boughalout, A. Keffous , M. Siad, M. Kechouane
Structural optical and electrical properties of a-Si1-xCx:H films synthesized by DC magnetron co-sputtering technique
March 21-24, 2010
The Fourth Saudi Sciences Conference, Almadinah Almunawwarah, ARABIE SAOUDITE
A. Boughalout, M. Kechouane, A. Brighet, N. Zebbar, M. Siad
Physical properties of ZnO thin films deposited by DC reactive sputtering
March 21-24, 2010
The Fourth Saudi Sciences Conference, Almadinah Almunawwarah, ARABIE SAOUDITE
F. Hamadache, L. Zougar, K. Mokeddem, A. Brighet and B. Gelloz
The Photoelectrical Properties of a-Si:H Thin Films Deposited on Porous Silicon by DC-Magnetron Sputtering
October 10-15, 2010
218th ECS Meeting – Las Vegas, NV
A. Lami, R. Cherfi, F. Latreche, F. Hamadache
Effet de l’épaisseur sur les propriétés optoélectroniques du silicium amorphe hydrogéné (a-Si:H) déposées en couches minces par pulvérisation DC magnétron
13-15 Décembre 2010
Conférence Internationale sur l’Optique, la Photonique et leurs Applications, Alger